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| SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Very Small Package Low Forward Voltage Small Total Capacitance : VSM. : VF=0.92V (Typ.). : CT=2.2pF (Typ.). 2 KDS120V SILICON EPITAXIAL TYPE DIODE E B Fast Reverse Recovery Time : trr=1.6ns(Typ.). A G H 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55 150 UNIT V V mA mA A mW C P P DIM MILLIMETERS _ A 1.2 +0.05 _ B 0.8 +0.05 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ 0.8 + 0.05 G 0.40 H _ 0.12 + 0.05 J _ K 0.2 + 0.05 P 5 K J D 3 1. CATHODE 1 2. CATHODE 2 3. ANODE 2 1 VSM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking A3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.61 0.74 0.92 2.2 1.6 MAX. 1.20 0.5 4.0 4.0 A pF nS V UNIT SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr 2001. 7. 24 Revision No : 0 1/1 |
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